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| 2SK3466 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (-MOSV) 2SK3466 Chopper Regulator Unit: mm Low drain-source ON resistance: RDS (ON) = 1.35 (typ.) High forward transfer admittance: iYfsi = 4.0 S (typ.) Low leakage current: IDSS = 100 A (max) (VDS = 500 V) Enhancement-model: Vth = 2.0 to 4.0 V (VDS = 10 V, ID = 1 mA) * * * * Maximum Ratings (Ta = 25C) Characteristics Drain-source voltage Drain-gate voltage (RGS = 20 kW) Gate-source voltage Drain current DC Pulse (Note 1) (Note 1) Symbol VDSS VDGR VGSS ID IDP PD EAS IAR EAR Tch Tstg Rating 500 500 30 5 20 50 180 5 5 150 -55 to 150 Unit V V V A W mJ A mJ C C Drain power dissipation (Tc = 25C) Single pulse avalanche energy (Note 2) Avalanche current Repetitive avalanche energy (Note 3) Channel temperature Storage temperature range JEDEC JEITA TOSHIBA SC-97 2-9F1B Weight: 0.74 g (typ.) Thermal Characteristics Characteristics Thermal resistance, channel to case Symbol Rth (ch-c) Max 2.5 Unit C/W Circuit Configuration 4 Note 1: Please use devises on condition that the channel temperature is below 150C. Note 2: VDD = 90 V, Tch = 25C (initial), L = 12.2 mH, RG = 25 W, IAR = 5 A Note 3: Repetitive rating: pulse width limited by maximum channel temperature This transistor is an electrostatic sensitive device. Please handle with caution. 1 3 1 2002-02-06 2SK3466 Electrical Characteristics (Ta = 25C) Characteristics Gate leakage current Drain cut-OFF current Drain-source breakdown voltage Gate threshold voltage Drain-source ON resistance Forward transfer admittance Input capacitance Reverse transfer capacitance Output capacitance Rise time Symbol IGSS IDSS V (BR) DSS Vth RDS (ON) iYfsi Ciss Crss Coss tr ton tf toff Qg Qgs Qgd VDD ~ 400 V, VGS = 10 V, ID = 5 A Duty < 1%, tw = 10 ms = VDD ~ 225 V 3/4 3/4 3/4 3/4 60 17 11 6 VDS = 10 V, VGS = 0 V, f = 1 MHz Test Condition VGS = 25 V, VDS = 0 V VDS = 500 V, VGS = 0 V ID = 10 mA, VGS = 0 V VDS = 10 V, ID = 1 mA VGS = 10 V, ID = 5 A VDS = 10 V, ID = 5 A Min 3/4 3/4 500 2.0 3/4 2.5 3/4 3/4 Typ. 3/4 3/4 3/4 3/4 1.35 4.0 780 60 200 12 Max 10 100 3/4 4.0 1.50 3/4 3/4 3/4 pF Unit mA mA V V W S 3/4 10 V ID = 2.5 A Output 3/4 3/4 3/4 ns 3/4 3/4 3/4 Turn-ON time Switching time Fall time VGS 0V 25 15 W RL = 90 W 15 3/4 3/4 3/4 3/4 3/4 nC Turn-OFF time Total gate charge (gate-source plus gate-drain) Gate-source charge Gate-drain ("miller") charge Source-Drain Ratings and Characteristics (Ta = 25C) Characteristics Continuous drain reverse current (Note 1) Pulse drain reverse current Forward voltage (diode) Reverse recovery time Reverse recovery charge (Note 1) Symbol IDSF IDRP VDSF trr Qrr Test Condition 3/4 3/4 IDR = 5 A, VGS = 0 V IDR = 5 A, VGS = 0 V, dIDR/dt = 100 A/ms Min 3/4 3/4 3/4 3/4 3/4 Typ. 3/4 3/4 3/4 1400 9 Max 5 20 -1.7 3/4 3/4 Unit A A V ns mC Marking Lot Number K3466 Type Month (starting from alphabet A) Year (last number of the christian era) 2 2002-02-06 2SK3466 ID - VDS 5 Common source Tc = 25C 4 Pulse test 10, 15 6 5.5 5.25 10 Common source Tc = 25C 8 Pulse test ID - VDS 15 10 6 (A) ID 3 ID (A) 5 6 5.5 Drain current 2 4.75 Drain current 4 5 2 4.5 1 VGS = 4 V 0 0 2 4 6 8 10 4.5 VGS = 4 V 0 0 10 20 30 40 50 Drain-source voltage VDS (V) Drain-source voltage VDS (V) ID - VGS 10 Common source VDS = 20 V 8 Pulse test Tc = -55C 20 VDS - VGS Common source (V) Tc = 25C 16 Pulse test (A) 25 ID Drain current 100 4 Drain-source voltage 6 VDS 12 8 ID = 5 A 2 4 2.5 1.2 0 0 2 4 6 8 10 0 0 4 8 12 16 20 Gate-source voltage VGS (V) Gate-source voltage VGS (V) iYfsi - ID 10 RDS (ON) - ID 10 Tc = -55C 25 100 Common source Tc = 25C 5 Pulse test 3 VGS = 10 V 15 1 (S) Common source Forward transfer admittance |Yfs| 3 1 0.5 0.3 0.1 0.3 0.5 1 3 5 10 Drain-source ON resistance RDS (ON) (9) VDS = 20 V 5 Pulse test 0.5 0.3 0.1 0.3 0.5 1 3 5 10 Drain current ID (A) Drain current ID (A) 3 2002-02-06 2SK3466 RDS (ON) - Tc 5 Common source VGS = 10 V Pulse test 10 Common source Tc = 25C Pulse test 3 IDR - VDS Drain-source ON resistance RDS (ON) (9 4 3 1.2 Drain reverse current IDR 2.5 (A) ID = 5 A 1 0.5 0.3 10 5 3 1 VGS = 0, -1 V -0.8 -1.0 -1.2 2 1 0 -80 -40 0 40 80 120 160 0.1 0 -0.2 -0.4 -0.6 Case temperature Tc (C) Drain-source voltage VDS (V) Capacitance - VDS 2000 1000 Ciss 5 Vth - Tc Common source VDS = 10 V ID = 1 mA Pulse test Gate threshold voltage Vth (V) 100 (pF) 500 300 4 Capacitance C 3 100 Coss 50 30 Common source VGS = 0 V 10 f = 1 MHz Tc = 25C 5 0.1 0.3 0.5 1 2 Crss 1 3 5 10 30 50 0 -80 -40 0 40 80 120 160 Drain-source voltage VDS (V) Case temperature Tc (C) PD - Tc 80 500 Dynamic input/output characteristics 20 Common source ID = 5 A Tc = 25C Pulse test 16 VDS VDD = 100 V 300 200 200 400 8 12 (W) (V) 400 PD VDS Drain power dissipation Drain-source voltage 40 20 100 VGS 4 0 0 40 80 120 160 200 0 0 5 10 15 20 0 25 Case temperature Tc (C) Total gate charge Qg (nC) 4 2002-02-06 Gate-source voltage VGS 60 (V) 2SK3466 rth - tw Normalized transient thermal impedance 3 1 0.5 Duty = 0.5 0.2 0.1 rth (t)/Rth (ch-c) 0.3 0.1 0.05 PDM Single pulse t T 0.05 0.02 0.03 0.01 0.01 0.005 0.003 10 m 30 m Duty = t/T Rth (ch-c) =2.5C/W 100 m 300 m 1m 3m 10 m 30 m 100 m 300 m 1 3 10 Pulse width tw (s) Safe operating area 100 200 EAS - Tch 30 ID max (pulsed) * 100 ms * 10 (mJ) Avalanche energy EAS 1 ms * 50 160 (A) 5 3 1 0.5 0.3 ID max (continuous) * 120 Drain current ID 80 DC operation Tc = 25C 40 * Single nonrepetitive 0.1 pulse Tc = 25C 0.05 Curves must be derated 0.03 0.01 1 linearly with increase in temperature. 3 5 10 30 50 VDSS max 100 300 500 1000 0 25 Channel temperature (initial) Tch 50 75 100 125 (C) 150 Drain-source voltage VDS (V) 15 V -15 V BVDSS IAR VDD VDS Test circuit RG = 25 W VDD = 90 V, L = 12.2 mH AS = Wave form ae o 1 B VDSS / x L x I2 x c cB / 2 VDSS - VDD o e 5 2002-02-06 2SK3466 RESTRICTIONS ON PRODUCT USE * 000707EAA TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of such TOSHIBA products could cause loss of human life, bodily injury or damage to property. In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as set forth in the most recent TOSHIBA products specifications. Also, please keep in mind the precautions and conditions set forth in the "Handling Guide for Semiconductor Devices," or "TOSHIBA Semiconductor Reliability Handbook" etc.. The TOSHIBA products listed in this document are intended for usage in general electronics applications (computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances, etc.). These TOSHIBA products are neither intended nor warranted for usage in equipment that requires extraordinarily high quality and/or reliability or a malfunction or failure of which may cause loss of human life or bodily injury ("Unintended Usage"). Unintended Usage include atomic energy control instruments, airplane or spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments, medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA products listed in this document shall be made at the customer's own risk. The information contained herein is presented only as a guide for the applications of our products. No responsibility is assumed by TOSHIBA CORPORATION for any infringements of intellectual property or other rights of the third parties which may result from its use. No license is granted by implication or otherwise under any intellectual property or other rights of TOSHIBA CORPORATION or others. The information contained herein is subject to change without notice. * * * 6 2002-02-06 This datasheet has been download from: www..com Datasheets for electronics components. |
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